CEDM7002AE MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

CEDM7002AE Specs and Replacement

Type Designator: CEDM7002AE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT-883L

CEDM7002AE substitution

- MOSFET ⓘ Cross-Reference Search

CEDM7002AE datasheet

..1. Size:805K central
cedm7002ae.pdf pdf_icon

CEDM7002AE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7002AE MOSFET is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications. MARKING CODE 7 SOT-883L CASE APPLICATIONS FEATURES Load/Power switc... See More ⇒

7.1. Size:358K central
cedm7001.pdf pdf_icon

... See More ⇒

7.2. Size:1044K central
cedm7004vl.pdf pdf_icon

CEDM7004VL SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7004VL is an MOSFET N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE S COMPLEMENTARY P-CHA... See More ⇒

7.3. Size:219K central
cedm7001e.pdf pdf_icon