CEDM7004 Specs and Replacement

Type Designator: CEDM7004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: SOT-883L

CEDM7004 substitution

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CEDM7004 datasheet

 ..1. Size:1035K  central
cedm7004.pdf pdf_icon

CEDM7004

CEDM7004 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7004 SILICON MOSFET is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Threshold Voltage. MARKING CODE S FEA... See More ⇒

 0.1. Size:1044K  central
cedm7004vl.pdf pdf_icon

CEDM7004

CEDM7004VL SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7004VL is an MOSFET N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE S COMPLEMENTARY P-CHA... See More ⇒

 7.1. Size:358K  central
cedm7001.pdf pdf_icon

CEDM7004

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 7.2. Size:219K  central
cedm7001e.pdf pdf_icon

CEDM7004

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Detailed specifications: CEB30N3, CED05N8, CED5175, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE, STP80NF70, CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004, CEDM8004VL, CEEF02N65G, CEF05N8, CEF18N5

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