All MOSFET. CEDM8004VL Datasheet

 

CEDM8004VL Datasheet and Replacement


   Type Designator: CEDM8004VL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 8.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: SOT-883VL
 

 CEDM8004VL substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEDM8004VL Datasheet (PDF)

 ..1. Size:951K  central
cedm8004vl.pdf pdf_icon

CEDM8004VL

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA

 6.1. Size:451K  central
cedm8004.pdf pdf_icon

CEDM8004VL

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE

 7.1. Size:959K  central
cedm8001vl.pdf pdf_icon

CEDM8004VL

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 7.2. Size:358K  central
cedm8001.pdf pdf_icon

CEDM8004VL

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:

Datasheet: CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 , 10N65 , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 , CEM4248 , CEP05N8 .

History: 2SK2284 | AOLF66610 | TPCS8303 | MPSH70M290 | APT6025SVR | AO6422 | HAT2267H

Keywords - CEDM8004VL MOSFET datasheet

 CEDM8004VL cross reference
 CEDM8004VL equivalent finder
 CEDM8004VL lookup
 CEDM8004VL substitution
 CEDM8004VL replacement

 

 
Back to Top

 


 
.