Справочник MOSFET. CEDM8004VL

 

CEDM8004VL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CEDM8004VL
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.45 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 8.5 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: SOT-883VL
     - подбор MOSFET транзистора по параметрам

 

CEDM8004VL Datasheet (PDF)

 ..1. Size:951K  central
cedm8004vl.pdfpdf_icon

CEDM8004VL

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA

 6.1. Size:451K  central
cedm8004.pdfpdf_icon

CEDM8004VL

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE

 7.1. Size:959K  central
cedm8001vl.pdfpdf_icon

CEDM8004VL

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 7.2. Size:358K  central
cedm8001.pdfpdf_icon

CEDM8004VL

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CED3120 | UT9435HG-S08-R | HUF76013D3S | CED25N15L | UTD351 | SWP078R08E8T | HUF76445S3ST

 

 
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