CEDM8004VL. Аналоги и основные параметры

Наименование производителя: CEDM8004VL

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.45 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 8.5 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm

Тип корпуса: SOT-883VL

Аналог (замена) для CEDM8004VL

- подборⓘ MOSFET транзистора по параметрам

 

CEDM8004VL даташит

 ..1. Size:951K  central
 cedm8004vl.pdf pdf_icon

CEDM8004VL

CEDM8004VL SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8004VL is an MOSFET P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE V COMPLEMENTARY N-CHA

 6.1. Size:451K  central
 cedm8004.pdf pdf_icon

CEDM8004VL

CEDM8004 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8004 is an SILICON MOSFET enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage. MARKING CODE V FEATURES SOT-883L CASE

 7.1. Size:959K  central
 cedm8001vl.pdf pdf_icon

CEDM8004VL

CEDM8001VL SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8001VL is a MOSFET P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 7.2. Size:358K  central
 cedm8001.pdf pdf_icon

CEDM8004VL

CEDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFET a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE F FEATURES

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004, 4N60, CEEF02N65G, CEF05N8, CEF18N5, CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8