All MOSFET. CEM101 Datasheet

 

CEM101 Datasheet and Replacement


   Type Designator: CEM101
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: SO-8
 

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CEM101 Datasheet (PDF)

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CEM101

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

 0.1. Size:432K  cet
 cem1010.pdf pdf_icon

CEM101

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

Datasheet: CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , 5N60 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 , CEU5175 , HX2N60 .

History: NCE60H28LL | GP2M007A065XG

Keywords - CEM101 MOSFET datasheet

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