CEM101 Specs and Replacement

Type Designator: CEM101

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: SO-8

CEM101 substitution

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CEM101 datasheet

 ..1. Size:406K  cet
 cem101.pdf pdf_icon

CEM101

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not... See More ⇒

 0.1. Size:432K  cet
 cem1010.pdf pdf_icon

CEM101

CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not... See More ⇒

Detailed specifications: CEDM8001, CEDM8001VL, CEDM8004, CEDM8004VL, CEEF02N65G, CEF05N8, CEF18N5, CEF30N3, 5N60, CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175, HX2N60

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.