All MOSFET. CEM101 Datasheet

 

CEM101 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM101
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: SO-8

 CEM101 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM101 Datasheet (PDF)

 ..1. Size:406K  cet
 cem101.pdf

CEM101 CEM101

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

 0.1. Size:432K  cet
 cem1010.pdf

CEM101 CEM101

CEM1010Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 9.5A, RDS(ON) = 15.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE60P70G | 2SK3435-Z

 

 
Back to Top