All MOSFET. HY125N10T Datasheet

 

HY125N10T Datasheet and Replacement


   Type Designator: HY125N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO-220AB
 

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HY125N10T Datasheet (PDF)

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HY125N10T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY125N10T 100V / 125A100V, RDS(ON)=5.8mW@VGS=10V, ID=40AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product

Datasheet: HX2N60 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , HY110N06T , IRFZ48N , HY12N65T , HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D , HY2N60D .

History: AK4N60S | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | QM3024N3 | AM2394NE | AOTL66918

Keywords - HY125N10T MOSFET datasheet

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