HY125N10T Specs and Replacement
Type Designator: HY125N10T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 680 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-220AB
HY125N10T substitution
- MOSFET ⓘ Cross-Reference Search
HY125N10T datasheet
hy125n10t.pdf
SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY125N10T 100V / 125A 100V, RDS(ON)=5.8mW@VGS=10V, ID=40A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product... See More ⇒
Detailed specifications: HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, STP65NF06, HY12N65T, HY13N50T, HY150N075T, HY18N20D, HY18N20T, HY18N50W, HY1N60D, HY2N60D
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
