All MOSFET. HY12N65T Datasheet

 

HY12N65T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY12N65T
   Marking Code: 12N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42.6 nC
   trⓘ - Rise Time: 22.6 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB

 HY12N65T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY12N65T Datasheet (PDF)

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 hy12n65t.pdf

HY12N65T HY12N65T

HY12N65T / HY12N65FT650V / 12A650V, RDS(ON)=0.8@VGS=10V, ID=6.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G3 3D DS S

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PSMN8R5-60YS

 

 
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