HY12N65T Specs and Replacement
Type Designator: HY12N65T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22.6 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220AB
HY12N65T substitution
- MOSFET ⓘ Cross-Reference Search
HY12N65T datasheet
hy12n65t.pdf
HY12N65T / HY12N65FT 650V / 12A 650V, RDS(ON)=0.8 @VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S ... See More ⇒
Detailed specifications: HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T, IRF1405, HY13N50T, HY150N075T, HY18N20D, HY18N20T, HY18N50W, HY1N60D, HY2N60D, HY2N60T
Keywords - HY12N65T MOSFET specs
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