HY13N50T Specs and Replacement
Type Designator: HY13N50T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220AB
HY13N50T substitution
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HY13N50T datasheet
hy13n50t.pdf
HY13N50T / HY13N50FT 500V / 13A 500V, RDS(ON)=0.52W@VGS=10V, ID=6.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1... See More ⇒
Detailed specifications: HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T, HY12N65T, 7N60, HY150N075T, HY18N20D, HY18N20T, HY18N50W, HY1N60D, HY2N60D, HY2N60T, HY2N65D
Keywords - HY13N50T MOSFET specs
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