All MOSFET. HY13N50T Datasheet

 

HY13N50T Datasheet and Replacement


   Type Designator: HY13N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 183 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO-220AB
 

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HY13N50T Datasheet (PDF)

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HY13N50T

HY13N50T / HY13N50FT 500V / 13A500V, RDS(ON)=0.52W@VGS=10V, ID=6.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , HY110N06T , HY125N10T , HY12N65T , MMIS60R580P , HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D .

History: HFD2N65S

Keywords - HY13N50T MOSFET datasheet

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