All MOSFET. HY13N50T Datasheet

 

HY13N50T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY13N50T
   Marking Code: 13N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 183 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.2 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO-220AB

 HY13N50T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY13N50T Datasheet (PDF)

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 hy13n50t.pdf

HY13N50T HY13N50T

HY13N50T / HY13N50FT 500V / 13A500V, RDS(ON)=0.52W@VGS=10V, ID=6.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HUF75639S3

 

 
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