HY13N50T MOSFET. Datasheet pdf. Equivalent
Type Designator: HY13N50T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220AB
HY13N50T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY13N50T Datasheet (PDF)
..1. Size:144K hy
hy13n50t.pdf
hy13n50t.pdf
HY13N50T / HY13N50FT 500V / 13A500V, RDS(ON)=0.52W@VGS=10V, ID=6.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SPI20N65C3
