HY18N20T Specs and Replacement
Type Designator: HY18N20T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO-220AB
HY18N20T substitution
- MOSFET ⓘ Cross-Reference Search
HY18N20T datasheet
hy18n20t.pdf
HY18N20T 200V / 18A 200V, RDS(ON)=92mW@VGS=10V, ID=10A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 In compliance with E... See More ⇒
hy18n20d.pdf
HY18N20D 200V / 18A 200V, RDS(ON)=92mW@VGS=10V, ID=10A N-Channel Enhancement Mode MOSFET Features TO-252 Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 In compliance with EU R... See More ⇒
hy18n50w.pdf
SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A 500V, RDS(ON)=0.32W@VGS=10V, ID=9A N-Channel Enhancement Mode MOSFET Features TO-3PN Low On-State Resistance Fast Switching Low Gate Charge & Low CR... See More ⇒
Detailed specifications: HX70N6, HY10N65T, HY110N06T, HY125N10T, HY12N65T, HY13N50T, HY150N075T, HY18N20D, IRF830, HY18N50W, HY1N60D, HY2N60D, HY2N60T, HY2N65D, HY2N65T, HY2N70D, HY2N70T
Keywords - HY18N20T MOSFET specs
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