HY18N50W Datasheet and Replacement
Type Designator: HY18N50W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36.8 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO-3PN
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HY18N50W Datasheet (PDF)
hy18n50w.pdf

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A500V, RDS(ON)=0.32W@VGS=10V, ID=9AN-Channel Enhancement Mode MOSFETFeaturesTO-3PN Low On-State Resistance Fast Switching Low Gate Charge & Low CR
hy18n20t.pdf

HY18N20T 200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E
hy18n20d.pdf

HY18N20D200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-252 Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with EU R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CEB02N9 | HLML6401 | DMN61D8L | IRFR1010ZPBF | MTP2603G6 | FS8205A | AP85T03GH-HF
Keywords - HY18N50W MOSFET datasheet
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History: CEB02N9 | HLML6401 | DMN61D8L | IRFR1010ZPBF | MTP2603G6 | FS8205A | AP85T03GH-HF



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