All MOSFET. HY18N50W Datasheet

 

HY18N50W MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY18N50W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 18 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 36.8 nS
   Drain-Source Capacitance (Cd): 320 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm
   Package: TO-3PN

 HY18N50W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY18N50W Datasheet (PDF)

 ..1. Size:294K  hy
hy18n50w.pdf

HY18N50W
HY18N50W

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY18N50W 500V / 18A500V, RDS(ON)=0.32W@VGS=10V, ID=9AN-Channel Enhancement Mode MOSFETFeaturesTO-3PN Low On-State Resistance Fast Switching Low Gate Charge & Low CR

 9.1. Size:214K  hy
hy18n20t.pdf

HY18N50W
HY18N50W

HY18N20T 200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E

 9.2. Size:213K  hy
hy18n20d.pdf

HY18N50W
HY18N50W

HY18N20D200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-252 Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with EU R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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