HY6N60D Specs and Replacement

Type Designator: HY6N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-252

HY6N60D substitution

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HY6N60D datasheet

 ..1. Size:185K  hy
 hy6n60d.pdf pdf_icon

HY6N60D

HY6N60D / HY6N60M 600V / 6.0A 600V, RDS(ON)=1.8 @VGS=10V, ID=3.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mec... See More ⇒

 8.1. Size:106K  hy
 hy6n60t.pdf pdf_icon

HY6N60D

HY6N60T / HY6N60FT 600V / 6.0A 600V, RDS(ON)=1.8 @VGS=10V, ID=3.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S ... See More ⇒

Detailed specifications: HY3N80T, HY4N60D, HY4N60T, HY4N65D, HY4N65T, HY4N70D, HY4N70T, HY5N50T, IRF740, HY6N60T, HY75N075T, HY75N10T, HY7N80T, HY80N075T, HY80N07T, HY8N50T, HY8N65T

Keywords - HY6N60D MOSFET specs

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