HY75N075T Datasheet and Replacement
Type Designator: HY75N075T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220AB
HY75N075T substitution
HY75N075T Datasheet (PDF)
hy75n075t.pdf

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY75N075T 75V / 75A75V, RDS(ON)=9.0mW@VGS=10V, ID=20AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product (
hy75n10t.pdf

HY75N10T 100V / 75A100V, RDS(ON)=13mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E
Datasheet: HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D , HY6N60T , IRF840 , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R .
Keywords - HY75N075T MOSFET datasheet
HY75N075T cross reference
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History: CS5N65D | HFP8N70U



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