HY75N075T Specs and Replacement
Type Designator: HY75N075T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.2 nS
Cossⓘ - Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220AB
HY75N075T substitution
- MOSFET ⓘ Cross-Reference Search
HY75N075T datasheet
hy75n075t.pdf
SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY75N075T 75V / 75A 75V, RDS(ON)=9.0mW@VGS=10V, ID=20A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( ... See More ⇒
hy75n10t.pdf
HY75N10T 100V / 75A 100V, RDS(ON)=13mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 In compliance with E... See More ⇒
Detailed specifications: HY4N60T, HY4N65D, HY4N65T, HY4N70D, HY4N70T, HY5N50T, HY6N60D, HY6N60T, 20N60, HY75N10T, HY7N80T, HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R
Keywords - HY75N075T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
