All MOSFET. HY75N10T Datasheet

 

HY75N10T Datasheet and Replacement


   Type Designator: HY75N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-220AB
 

 HY75N10T substitution

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HY75N10T Datasheet (PDF)

 ..1. Size:216K  hy
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HY75N10T

HY75N10T 100V / 75A100V, RDS(ON)=13mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E

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HY75N10T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY75N075T 75V / 75A75V, RDS(ON)=9.0mW@VGS=10V, ID=20AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product (

Datasheet: HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D , HY6N60T , HY75N075T , IRF540N , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q .

History: CSD17305Q5A | HY7N80T

Keywords - HY75N10T MOSFET datasheet

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