HY75N10T Specs and Replacement

Type Designator: HY75N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.8 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-220AB

HY75N10T substitution

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HY75N10T datasheet

 ..1. Size:216K  hy
 hy75n10t.pdf pdf_icon

HY75N10T

HY75N10T 100V / 75A 100V, RDS(ON)=13mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain 2 In compliance with E... See More ⇒

 9.1. Size:220K  hy
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HY75N10T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY75N075T 75V / 75A 75V, RDS(ON)=9.0mW@VGS=10V, ID=20A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( ... See More ⇒

Detailed specifications: HY4N65D, HY4N65T, HY4N70D, HY4N70T, HY5N50T, HY6N60D, HY6N60T, HY75N075T, IRF540N, HY7N80T, HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R, RU120N15Q

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