HY80N07T Specs and Replacement

Type Designator: HY80N07T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.6 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO-220AB

HY80N07T substitution

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HY80N07T datasheet

 ..1. Size:222K  hy
 hy80n07t.pdf pdf_icon

HY80N07T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY80N07T 65V / 80A 65V, RDS(ON)=7.2mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( F... See More ⇒

 7.1. Size:216K  hy
 hy80n075t.pdf pdf_icon

HY80N07T

HY80N075T 75V / 80A 75V, RDS(ON)=8.0mW@VGS=10V, ID=40A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control Drain In compliance with EU Ro... See More ⇒

Detailed specifications: HY4N70T, HY5N50T, HY6N60D, HY6N60T, HY75N075T, HY75N10T, HY7N80T, HY80N075T, IRFP460, HY8N50T, HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R, RU140N10R, RU16P8M4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.