All MOSFET. HY80N07T Datasheet

 

HY80N07T Datasheet and Replacement


   Type Designator: HY80N07T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22.6 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO-220AB
 

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HY80N07T Datasheet (PDF)

 ..1. Size:222K  hy
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HY80N07T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY80N07T 65V / 80A65V, RDS(ON)=7.2mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( F

 7.1. Size:216K  hy
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HY80N07T

HY80N075T 75V / 80A75V, RDS(ON)=8.0mW@VGS=10V, ID=40AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain In compliance with EU Ro

Datasheet: HY4N70T , HY5N50T , HY6N60D , HY6N60T , HY75N075T , HY75N10T , HY7N80T , HY80N075T , IRF640 , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q , RU120N15R , RU140N10R , RU16P8M4 .

History: TPB65R120M | 2SK3639 | IRFP4137PBF | IXTA48N20T | 2SK3638 | SI4396DY | AP9970GW

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