All MOSFET. RU1H190S Datasheet

 

RU1H190S Datasheet and Replacement


   Type Designator: RU1H190S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263
 

 RU1H190S substitution

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RU1H190S Datasheet (PDF)

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RU1H190S

RU1H190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe

 7.1. Size:303K  ruichips
ru1h190r.pdf pdf_icon

RU1H190S

RU1H190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe

 9.1. Size:292K  ruichips
ru1h130q.pdf pdf_icon

RU1H190S

RU1H130QN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 9.2. Size:321K  ruichips
ru1h130r.pdf pdf_icon

RU1H190S

RU1H130RN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

Datasheet: RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , RU1H130Q , RU1H130R , RU1H130S , RU1H190R , 7N65 , RU1H300Q , RU1H35K , RU1H35L , RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R .

History: RJK0655DPB | STN80T08 | BUK9K8R7-40E | VN2406D | PA5D8JA | DSKTJ05 | NCE5520Q

Keywords - RU1H190S MOSFET datasheet

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