RU1H190S - описание и поиск аналогов

 ..1. Size:294K  ruichips
 ru1h190s.pdf 

RU1H190S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/190A, RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Channe

 7.1. Size:303K  ruichips
 ru1h190r.pdf 

RU1H190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/190A, RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Channe

 9.1. Size:292K  ruichips
 ru1h130q.pdf 

RU1H130Q N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan

 9.2. Size:321K  ruichips
 ru1h130r.pdf 

RU1H130R N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan

 9.3. Size:288K  ruichips
 ru1h100r.pdf 

RU1H100R N-Channel Advanced Power MOSFET Features Pin Description 100V/75A RDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High Speed Power Switching Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parame

 9.4. Size:372K  ruichips
 ru1h150s.pdf 

RU1H150S N-Channel Advanced Power MOSFET Features Pin Description 108V/150A, RDS (ON) =3.5m (Typ.)@VGS=10V D Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D D D Applicat

 9.5. Size:431K  ruichips
 ru1h150r.pdf 

RU1H150R N-Channel Advanced Power MOSFET Features Pin Description 108V/150A, RDS (ON) =3.5m (Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D D D D D D D Applicat

 9.6. Size:322K  ruichips
 ru1h130s.pdf 

RU1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan