RU1H36L Specs and Replacement

Type Designator: RU1H36L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-252

RU1H36L substitution

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RU1H36L datasheet

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ru1h36l.pdf pdf_icon

RU1H36L

RU1H36L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P... See More ⇒

 8.1. Size:291K  ruichips
ru1h36r.pdf pdf_icon

RU1H36L

RU1H36R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P... See More ⇒

 8.2. Size:282K  ruichips
ru1h36s.pdf pdf_icon

RU1H36L

RU1H36S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P... See More ⇒

 9.1. Size:287K  ruichips
ru1h35q.pdf pdf_icon

RU1H36L

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

Detailed specifications: RU1H190R, RU1H190S, RU1H300Q, RU1H35K, RU1H35L, RU1H35Q, RU1H35R, RU1H35S, IRF4905, RU1H36R, RU1H36S, RU1H40L, RU1H60R, RU1H7H, RU1H80R, RU1HC2H, RU1HE12L

Keywords - RU1H36L MOSFET specs

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