Справочник MOSFET. RU1H36L

 

RU1H36L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU1H36L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 71 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 32 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 95 ns
   Выходная емкость (Cd): 230 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для RU1H36L

 

 

RU1H36L Datasheet (PDF)

 ..1. Size:279K  ruichips
 ru1h36l.pdf

RU1H36L RU1H36L

RU1H36LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.1. Size:291K  ruichips
 ru1h36r.pdf

RU1H36L RU1H36L

RU1H36RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.2. Size:282K  ruichips
 ru1h36s.pdf

RU1H36L RU1H36L

RU1H36SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 9.1. Size:287K  ruichips
 ru1h35q.pdf

RU1H36L RU1H36L

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.2. Size:298K  ruichips
 ru1h35r.pdf

RU1H36L RU1H36L

RU1H35RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-220ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.3. Size:290K  ruichips
 ru1h35s.pdf

RU1H36L RU1H36L

RU1H35SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-263ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.4. Size:292K  ruichips
 ru1h300q.pdf

RU1H36L RU1H36L

RU1H300QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/300A, RDS (ON) =3m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficienc

 9.5. Size:282K  ruichips
 ru1h35k.pdf

RU1H36L RU1H36L

RU1H35KN-Channel Advanced Power MOSFETFeatures Pin Description 100V/40A, RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (

 9.6. Size:284K  ruichips
 ru1h35l.pdf

RU1H36L RU1H36L

RU1H35LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C

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