RU1HL13R Specs and Replacement

Type Designator: RU1HL13R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 616 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-220

RU1HL13R substitution

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RU1HL13R datasheet

 ..1. Size:301K  ruichips
 ru1hl13r.pdf pdf_icon

RU1HL13R

RU1HL13R P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO-220 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Ch... See More ⇒

 7.1. Size:293K  ruichips
 ru1hl13l.pdf pdf_icon

RU1HL13R

RU1HL13L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha... See More ⇒

 7.2. Size:296K  ruichips
 ru1hl13k.pdf pdf_icon

RU1HL13R

RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO251 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha... See More ⇒

 9.1. Size:304K  ruichips
 ru1hl8l.pdf pdf_icon

RU1HL13R

RU1HL8L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-10A, RDS (ON) =120m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Chan... See More ⇒

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Detailed specifications: RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, IRF530, RU1HL8L, RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L

Keywords - RU1HL13R MOSFET specs

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