RU2013H Datasheet and Replacement
Type Designator: RU2013H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP-8
RU2013H substitution
RU2013H Datasheet (PDF)
ru2013h.pdf

RU2013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/13A,RDS (ON) =13m (Typ.) @ VGS=10VRDS (ON) =16m (Typ.) @ VGS=4.5VRDS (ON) =22m (Typ.) @ VGS=2.5V Super High Dense Cell Design Low On-Resistance Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConvertersN-Channel MOSFETAbsolute Maximum Ratin
ru20130l.pdf

RU20130LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/130A,RDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =4.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru20120l.pdf

RU20120LN-Channel Advanced Power MOSFETFeatures Pin Description 20V/120A, RDS (ON) =2.3m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO252Applications Power Management DC-DC ConvertersN-
Datasheet: RU1HL8L , RU1HP55R , RU1HP60R , RU1J002YN , RU1Z120R , RU1Z200Q , RU20120L , RU20130L , 10N65 , RU2020H , RU2021H , RU205B , RU206G , RU2090M , RU20D10H , RU20E60L , RU20E8H .
History: AP4543GEH-HF | NCE60N1K0I
Keywords - RU2013H MOSFET datasheet
RU2013H cross reference
RU2013H equivalent finder
RU2013H lookup
RU2013H substitution
RU2013H replacement
History: AP4543GEH-HF | NCE60N1K0I



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