IRFS830A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS830A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO220F
IRFS830A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS830A
Datasheet (PDF)
..1. Size:499K samsung
irfs830a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
7.3. Size:888K fairchild semi
irf830b irfs830b.pdf
November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to
7.4. Size:930K blue-rocket-elect
irfs830.pdf
IRFS830 Rev.E Dec.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
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