All MOSFET. IRFS830A Datasheet

 

IRFS830A Datasheet and Replacement


   Type Designator: IRFS830A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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IRFS830A Datasheet (PDF)

 ..1. Size:499K  samsung
 irfs830a.pdf pdf_icon

IRFS830A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 7.1. Size:284K  1
 irfs830 irfs831.pdf pdf_icon

IRFS830A

 7.2. Size:308K  1
 irfs830 irfs831 irfs832 irfs833.pdf pdf_icon

IRFS830A

 7.3. Size:888K  fairchild semi
 irf830b irfs830b.pdf pdf_icon

IRFS830A

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS743 , IRFS750A , IRFS820 , IRFS820A , IRFS821 , IRFS822 , IRFS823 , IRFS830 , 60N06 , IRFS831 , IRFS832 , IRFS833 , IRFS840 , IRFS840A , IRFS841 , IRFS842 , IRFS843 .

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