All MOSFET. RU2021H Datasheet

 

RU2021H MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU2021H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: SOP-8

 RU2021H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU2021H Datasheet (PDF)

 ..1. Size:269K  ruichips
 ru2021h.pdf

RU2021H RU2021H

RU2021HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/20A,RDS (ON) =4m (Typ.) @ VGS=10VRDS (ON) =5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Low RDS(ON) Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rat

 9.1. Size:266K  ruichips
 ru2020h.pdf

RU2021H RU2021H

RU2020HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/20A,RDS (ON) =3.5m (Typ.) @ VGS=10VRDS (ON) =3.8m (Typ.) @ VGS=4.5VRDS (ON) =5.6m (Typ.) @ VGS=2.5V Super High Dense Cell Design Low RDS(ON) Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConverterN-Channel MOSFETAbsolute Maximum Ratings

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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