RU205B Specs and Replacement

Type Designator: RU205B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT-23

RU205B substitution

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RU205B datasheet

 ..1. Size:262K  ruichips
 ru205b.pdf pdf_icon

RU205B

RU205B N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/5A, RDS (ON) =30m (Typ.) @ VGS=4.5V RDS (ON) =38m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Load Switch PWM Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Ra... See More ⇒

 ..2. Size:915K  cn vbsemi
 ru205b.pdf pdf_icon

RU205B

RU205B www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert... See More ⇒

 9.1. Size:419K  ruichips
 ru205c.pdf pdf_icon

RU205B

RU205C N-Channel Advanced Power MOSFET Features Pin Description 20V/5A, RDS (ON) =40m (Typ.)@VGS=4.5V D RDS (ON) =50m (Typ.)@VGS=2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast Switching V F t S it hi G Low Threshold Voltage Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D D D D D D pp Applications ... See More ⇒

Detailed specifications: RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H, RU2020H, RU2021H, 2SK3568, RU206G, RU2090M, RU20D10H, RU20E60L, RU20E8H, RU20P18L, RU20P2B, RU20P3B

Keywords - RU205B MOSFET specs

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