RU205B MOSFET. Datasheet pdf. Equivalent
Type Designator: RU205B
Marking Code: 5*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT-23
RU205B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU205B Datasheet (PDF)
ru205b.pdf
RU205BN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/5A,RDS (ON) =30m (Typ.) @ VGS=4.5VRDS (ON) =38m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Load Switch PWM ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra
ru205b.pdf
RU205Bwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert
ru205c.pdf
RU205CN-Channel Advanced Power MOSFETFeatures Pin Description 20V/5A,RDS (ON) =40m(Typ.)@VGS=4.5VDRDS (ON) =50m(Typ.)@VGS=2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast SwitchingV F t S it hiG Low Threshold Voltage Lead Free and Green Devices (RoHS Compliant)SSOT23-3DDDDDDppApplications
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP30N06FI
History: STP30N06FI
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