All MOSFET. RU205B Datasheet

 

RU205B Datasheet and Replacement


   Type Designator: RU205B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOT-23
 

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RU205B Datasheet (PDF)

 ..1. Size:262K  ruichips
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RU205B

RU205BN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/5A,RDS (ON) =30m (Typ.) @ VGS=4.5VRDS (ON) =38m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Load Switch PWM ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra

 ..2. Size:915K  cn vbsemi
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RU205B

RU205Bwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

 9.1. Size:419K  ruichips
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RU205B

RU205CN-Channel Advanced Power MOSFETFeatures Pin Description 20V/5A,RDS (ON) =40m(Typ.)@VGS=4.5VDRDS (ON) =50m(Typ.)@VGS=2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast SwitchingV F t S it hiG Low Threshold Voltage Lead Free and Green Devices (RoHS Compliant)SSOT23-3DDDDDDppApplications

Datasheet: RU1J002YN , RU1Z120R , RU1Z200Q , RU20120L , RU20130L , RU2013H , RU2020H , RU2021H , 5N65 , RU206G , RU2090M , RU20D10H , RU20E60L , RU20E8H , RU20P18L , RU20P2B , RU20P3B .

History: CHM06N5NGP | SL150N03Q | CEB08N8 | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

Keywords - RU205B MOSFET datasheet

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