RU20E60L Specs and Replacement

Type Designator: RU20E60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-252

RU20E60L substitution

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RU20E60L datasheet

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 ru20e60l.pdf pdf_icon

RU20E60L

RU20E60L N-Channel Advanced Power MOSFET Features Pin Description 20V/60A, RDS (ON) =6m (Typ.)@VGS=4.5V D Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications DC/DC converter Motor Drives G S N-Cha... See More ⇒

 9.1. Size:278K  ruichips
 ru20e8h.pdf pdf_icon

RU20E60L

RU20E8H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/8.8A, RDS (ON) =12m (Typ.) @ VGS=10V RDS (ON) =15m (Typ.) @ VGS=4.5V RDS (ON) =21m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management Converters N-Channel MOSFET Absolute ... See More ⇒

Detailed specifications: RU20130L, RU2013H, RU2020H, RU2021H, RU205B, RU206G, RU2090M, RU20D10H, SI2302, RU20E8H, RU20P18L, RU20P2B, RU20P3B, RU20P4C, RU20P5E, RU20T7G, RU20T8M7

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