All MOSFET. RU20E60L Datasheet

 

RU20E60L Datasheet and Replacement


   Type Designator: RU20E60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252
 

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RU20E60L Datasheet (PDF)

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RU20E60L

RU20E60LN-Channel Advanced Power MOSFETFeatures Pin Description 20V/60A, RDS (ON) =6m(Typ.)@VGS=4.5VD Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications DC/DC converter Motor DrivesGSN-Cha

 9.1. Size:278K  ruichips
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RU20E60L

RU20E8HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/8.8A,RDS (ON) =12m (Typ.) @ VGS=10VRDS (ON) =15m (Typ.) @ VGS=4.5VRDS (ON) =21m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute

Datasheet: RU20130L , RU2013H , RU2020H , RU2021H , RU205B , RU206G , RU2090M , RU20D10H , 2N60 , RU20E8H , RU20P18L , RU20P2B , RU20P3B , RU20P4C , RU20P5E , RU20T7G , RU20T8M7 .

History: APT50M75B2LL | TPA70R450C | SHD226208 | HY1607M | APT10035B2FLLG | AFP2319AS | IXTP4N95A

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