IRFS831 Specs and Replacement

Type Designator: IRFS831

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

IRFS831 substitution

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IRFS831 datasheet

 ..1. Size:284K  1
 irfs830 irfs831.pdf pdf_icon

IRFS831

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 ..2. Size:308K  1
 irfs830 irfs831 irfs832 irfs833.pdf pdf_icon

IRFS831

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 8.1. Size:888K  fairchild semi
 irf830b irfs830b.pdf pdf_icon

IRFS831

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 8.2. Size:499K  samsung
 irfs830a.pdf pdf_icon

IRFS831

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

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Detailed specifications: IRFS750A, IRFS820, IRFS820A, IRFS821, IRFS822, IRFS823, IRFS830, IRFS830A, IRF9640, IRFS832, IRFS833, IRFS840, IRFS840A, IRFS841, IRFS842, IRFS843, IRFS9130

Keywords - IRFS831 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.