IRFS831 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS831
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
IRFS831 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS831 Datasheet (PDF)
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irfs830a.pdf
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irfs830.pdf
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