RU20P3B Specs and Replacement

Type Designator: RU20P3B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23

RU20P3B substitution

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RU20P3B datasheet

 ..1. Size:267K  ruichips
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RU20P3B

RU20P3B P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-3A, RDS (ON) =80m (Typ.) @ VGS=-4.5V RDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Parame... See More ⇒

 ..2. Size:866K  cn vbsemi
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RU20P3B

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RU20P3B

RU20P3C P-Channel Advanced Power MOSFET Features Pin Description -20V/-3A, RDS (ON) =110m (Typ.)@VGS=-4.5V D RDS (ON) =150m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SO... See More ⇒

 9.1. Size:415K  ruichips
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RU20P3B

RU20P7C P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D D D D D D D Applications pp Load Switch ... See More ⇒

Detailed specifications: RU205B, RU206G, RU2090M, RU20D10H, RU20E60L, RU20E8H, RU20P18L, RU20P2B, IRF520, RU20P4C, RU20P5E, RU20T7G, RU20T8M7, RU2520H, RU2560L, RU2568L, RU2H30Q

Keywords - RU20P3B MOSFET specs

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