RU20P3B. Аналоги и основные параметры
Наименование производителя: RU20P3B
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT-23
Аналог (замена) для RU20P3B
- подборⓘ MOSFET транзистора по параметрам
RU20P3B даташит
..1. Size:267K ruichips
ru20p3b.pdf 

RU20P3B P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-3A, RDS (ON) =80m (Typ.) @ VGS=-4.5V RDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Parame
8.1. Size:420K ruichips
ru20p3c.pdf 

RU20P3C P-Channel Advanced Power MOSFET Features Pin Description -20V/-3A, RDS (ON) =110m (Typ.)@VGS=-4.5V D RDS (ON) =150m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SO
9.1. Size:415K ruichips
ru20p7c.pdf 

RU20P7C P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D D D D D D D Applications pp Load Switch
9.2. Size:338K ruichips
ru20p18l.pdf 

RU20P18L P-Channel Advanced Power MOSFET Features Pin Description -20V/-18A, RDS (ON) =30m (Typ.)@VGS=-4.5V D RDS (ON) =45m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS Compliant) S TO252 D Ap
9.3. Size:327K ruichips
ru20p5e.pdf 

RU20P5E P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =50m (Typ.)@VGS=-4.5V RDS (ON) =65m (Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S D G SOT89 D Applications Load Switch Power Management G S P-Channel MOSFET Absolute M
9.4. Size:361K ruichips
ru20p4c6.pdf 

RU20P4C6 P-Channel Advanced Power MOSFET Features Pin Description -20V/-4A, S RDS (ON) =35m (Typ.)@VGS=-4.5V RDS (ON) =45m (Typ.)@VGS=-2.5V D Low On-Resistance D Super High Dense Cell Design Reliable and Rugged Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) D D SOT23-6 D D D D D D D Applications pp Load S
9.5. Size:270K ruichips
ru20p4c.pdf 

RU20P4C P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23-3 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Param
9.6. Size:393K ruichips
ru20p7c-i.pdf 

RU20P7C-I P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 Applications Load Switch Power Management Battery Protection P-Cha
9.7. Size:339K ruichips
ru20p2b.pdf 

RU20P2B P-Channel Advanced Power MOSFET Features Pin Description -20V/-2.4A, RDS (ON) =95m (Typ.)@VGS=-4.5V D RDS (ON) =140m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) S SOT23 D Applications Load Switch G S P-Channel MOSFET Absolute Maximum Ratings S
9.8. Size:867K cn vbsemi
ru20p4c.pdf 

RU20P4C www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)
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