RU2H30Q Specs and Replacement

Type Designator: RU2H30Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 308 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-247

RU2H30Q substitution

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RU2H30Q datasheet

 ..1. Size:281K  ruichips
 ru2h30q.pdf pdf_icon

RU2H30Q

RU2H30Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature TO-247 Lead Free and Green Available Applications Switching Application Systems DC/DC Converters N-Channel MOSFET Abs... See More ⇒

 8.1. Size:321K  ruichips
 ru2h30r.pdf pdf_icon

RU2H30Q

RU2H30R N-Channel Advanced Power MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G D S TO220 D Applications Switching Application Systems UPS G S N-Channel MOSFET Absolute... See More ⇒

 8.2. Size:324K  ruichips
 ru2h30s.pdf pdf_icon

RU2H30Q

RU2H30S N-Channel Advanced Power MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V D Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G S TO220 D Applications Switching Application Systems UPS G S N-Channel MOSFET Absolute... See More ⇒

Detailed specifications: RU20P3B, RU20P4C, RU20P5E, RU20T7G, RU20T8M7, RU2520H, RU2560L, RU2568L, AO3400A, RU2H30R, RU2H30S, RU2H50Q, RU2H50R, RU2H50S, RU2HE2D, RU2HE5L, RU30100L

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