All MOSFET. RU2H30R Datasheet

 

RU2H30R Datasheet and Replacement


   Type Designator: RU2H30R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 116 nC
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-220
 

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RU2H30R Datasheet (PDF)

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 ru2h30r.pdf pdf_icon

RU2H30R

RU2H30RN-Channel Advanced Power MOSFETFeatures Pin Description 200V/30A, RDS (ON) =75m(Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGDSTO220DApplications Switching Application Systems UPSGSN-Channel MOSFETAbsolute

 8.1. Size:281K  ruichips
 ru2h30q.pdf pdf_icon

RU2H30R

RU2H30QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/30A,RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureTO-247 Lead Free and Green AvailableApplications Switching Application Systems DC/DC ConvertersN-Channel MOSFETAbs

 8.2. Size:324K  ruichips
 ru2h30s.pdf pdf_icon

RU2H30R

RU2H30SN-Channel Advanced Power MOSFETFeatures Pin Description 200V/30A, RDS (ON) =75m(Typ.) @ VGS=10VD Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO220DApplications Switching Application Systems UPSGSN-Channel MOSFETAbsolute

Datasheet: RU20P4C , RU20P5E , RU20T7G , RU20T8M7 , RU2520H , RU2560L , RU2568L , RU2H30Q , IRF730 , RU2H30S , RU2H50Q , RU2H50R , RU2H50S , RU2HE2D , RU2HE5L , RU30100L , RU30100R .

Keywords - RU2H30R MOSFET datasheet

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