All MOSFET. RU2H50Q Datasheet

 

RU2H50Q Datasheet and Replacement


   Type Designator: RU2H50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-247
 

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RU2H50Q Datasheet (PDF)

 ..1. Size:291K  ruichips
 ru2h50q.pdf pdf_icon

RU2H50Q

RU2H50QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =34m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175C Operating TemperatureTO-247 Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

 8.1. Size:293K  ruichips
 ru2h50s.pdf pdf_icon

RU2H50Q

RU2H50SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

 8.2. Size:302K  ruichips
 ru2h50r.pdf pdf_icon

RU2H50Q

RU2H50RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

Datasheet: RU20T7G , RU20T8M7 , RU2520H , RU2560L , RU2568L , RU2H30Q , RU2H30R , RU2H30S , NCEP15T14 , RU2H50R , RU2H50S , RU2HE2D , RU2HE5L , RU30100L , RU30100R , RU30105L , RU30105R .

History: HCD90R1K6

Keywords - RU2H50Q MOSFET datasheet

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