RU2H50Q Specs and Replacement

Type Designator: RU2H50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 326 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-247

RU2H50Q substitution

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RU2H50Q datasheet

 ..1. Size:291K  ruichips
 ru2h50q.pdf pdf_icon

RU2H50Q

RU2H50Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/60A, RDS (ON) =34m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175 C Operating Temperature TO-247 Lead Free,RoHS compliant Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

 8.1. Size:293K  ruichips
 ru2h50s.pdf pdf_icon

RU2H50Q

RU2H50S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/60A, RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175 C Operating Temperature TO-263 Lead Free,RoHS compliant Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

 8.2. Size:302K  ruichips
 ru2h50r.pdf pdf_icon

RU2H50Q

RU2H50R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/60A, RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested TO-220 175 C Operating Temperature Lead Free,RoHS compliant Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

Detailed specifications: RU20T7G, RU20T8M7, RU2520H, RU2560L, RU2568L, RU2H30Q, RU2H30R, RU2H30S, IRF1405, RU2H50R, RU2H50S, RU2HE2D, RU2HE5L, RU30100L, RU30100R, RU30105L, RU30105R

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