RU2H50S MOSFET. Datasheet pdf. Equivalent
Type Designator: RU2H50S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 160 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 620 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO-263
RU2H50S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU2H50S Datasheet (PDF)
ru2h50s.pdf
RU2H50SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru2h50q.pdf
RU2H50QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =34m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche tested 175C Operating TemperatureTO-247 Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru2h50r.pdf
RU2H50RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/60A,RDS (ON) =36m (Typ.) @ VGS=10V Low Gate Charge Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching ApplicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
