RU3030M2 Specs and Replacement
Type Designator: RU3030M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN3333
RU3030M2 substitution
- MOSFET ⓘ Cross-Reference Search
RU3030M2 datasheet
ru3030m2.pdf
RU3030M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, RDS (ON) =10m (Typ.)@VGS=10V D D D RDS (ON) =15m (Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested G S S S Lead Free and Green Devices Available (RoHS Compliant) PIN1 PIN1 PDFN3333 D Applications Switching Applic... See More ⇒
ru3030m3.pdf
RU3030M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, RDS (ON) =7m (Typ.)@VGS=10V RDS (ON) =10m (Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technology G S Excellent QgxRDS(on) product(FOM) S S S Reliable and Rugged R li bl d R d 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) D D PIN1 D D DFN... See More ⇒
ru30300r.pdf
RU30300R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/300A, RDS (ON) =1.7m (Typ.) @ VGS=10V,IDS=75A Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-220 175 C Operating Temperature Lead Free and Green Available Applications DC/DC Converters UPS N-Channel MOSFET Absolute Maximum Ra... See More ⇒
Detailed specifications: RU30160S, RU3020H, RU3020L, RU30230R, RU30231R, RU30290R, RU30291R, RU30300R, IRF540N, RU3040M, RU3040M2, RU304B, RU3050L, RU3065L, RU306C, RU3070L, RU3070M
Keywords - RU3030M2 MOSFET specs
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