All MOSFET. RU3050L Datasheet

 

RU3050L Datasheet and Replacement


   Type Designator: RU3050L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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RU3050L Datasheet (PDF)

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RU3050L

RU3050LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/55A,RDS (ON) =7 m(Typ.)@VGS=10VRDS (ON) =12 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymb

Datasheet: RU30231R , RU30290R , RU30291R , RU30300R , RU3030M2 , RU3040M , RU3040M2 , RU304B , IRFZ44 , RU3065L , RU306C , RU3070L , RU3070M , RU3089L , RU3090M , RU30C8H , RU30D10H .

History: IXFK170N20P | IPD034N06N3

Keywords - RU3050L MOSFET datasheet

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