RU3065L Specs and Replacement

Type Designator: RU3065L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

RU3065L substitution

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RU3065L datasheet

 ..1. Size:292K  ruichips
 ru3065l.pdf pdf_icon

RU3065L

RU3065L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/65A, RDS (ON) =4m (Typ.)@VGS=10V RDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems N-Channel MOSFET Absolute Maximum R... See More ⇒

 9.1. Size:325K  ruichips
 ru3060l.pdf pdf_icon

RU3065L

RU3060L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/53A, RDS (ON) =9m (tpy.)@VGS=10V RDS (ON) =13m (tpy.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche Rated TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Desktop Computer, Portable Equipm... See More ⇒

 9.2. Size:314K  ruichips
 ru306c.pdf pdf_icon

RU3065L

RU306C N-Channel Advanced Power MOSFET Features Pin Description 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design SOT-23 Reliable and Rugged Lead Free and Green Available Applications DC/DC Converter Load Switch N-Channel MOSFET Ab... See More ⇒

Detailed specifications: RU30290R, RU30291R, RU30300R, RU3030M2, RU3040M, RU3040M2, RU304B, RU3050L, IRF640, RU306C, RU3070L, RU3070M, RU3089L, RU3090M, RU30C8H, RU30D10H, RU30D8H

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