RU306C Specs and Replacement
Type Designator: RU306C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-23
RU306C substitution
- MOSFET ⓘ Cross-Reference Search
RU306C datasheet
ru306c.pdf
RU306C N-Channel Advanced Power MOSFET Features Pin Description 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design SOT-23 Reliable and Rugged Lead Free and Green Available Applications DC/DC Converter Load Switch N-Channel MOSFET Ab... See More ⇒
ru3060l.pdf
RU3060L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/53A, RDS (ON) =9m (tpy.)@VGS=10V RDS (ON) =13m (tpy.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche Rated TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Desktop Computer, Portable Equipm... See More ⇒
ru3065l.pdf
RU3065L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/65A, RDS (ON) =4m (Typ.)@VGS=10V RDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems N-Channel MOSFET Absolute Maximum R... See More ⇒
Detailed specifications: RU30291R, RU30300R, RU3030M2, RU3040M, RU3040M2, RU304B, RU3050L, RU3065L, IRF1404, RU3070L, RU3070M, RU3089L, RU3090M, RU30C8H, RU30D10H, RU30D8H, RU30E30L
Keywords - RU306C MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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