All MOSFET. RU306C Datasheet

 

RU306C Datasheet and Replacement


   Type Designator: RU306C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23
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RU306C Datasheet (PDF)

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RU306C

RU306C N-Channel Advanced Power MOSFET Features Pin Description 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design SOT-23 Reliable and Rugged Lead Free and Green Available Applications DC/DC Converter Load Switch N-Channel MOSFET Ab

 9.1. Size:325K  ruichips
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RU306C

RU3060LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/53A,RDS (ON) =9m(tpy.)@VGS=10VRDS (ON) =13m(tpy.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche RatedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in DesktopComputer, Portable Equipm

 9.2. Size:292K  ruichips
ru3065l.pdf pdf_icon

RU306C

RU3065LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/65A,RDS (ON) =4m (Typ.)@VGS=10VRDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application SystemsN-Channel MOSFETAbsolute Maximum R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSW65R033SFD3 | UT8205A | WML11N80M3 | STP85N3LH5 | VBZA4412 | TPCA8078 | PSMN8R5-100ES

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