RU3070L Specs and Replacement
Type Designator: RU3070L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO-252
RU3070L substitution
- MOSFET ⓘ Cross-Reference Search
RU3070L datasheet
ru3070l.pdf
RU3070L N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, D RDS (ON) =3.3m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications Load Switch G S N-Channel MOSFET Absolute Maximum Ratings ... See More ⇒
ru3070m3.pdf
RU3070M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/70A G RDS (ON) =3m (Typ.)@VGS=10V S S S RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technology D D Excellent Q xR product(FOM) Excellent QgxRDS(on) product(FOM) D DD 100% avalanche tested Qualified according to JEDEC criteria Lead Free and Green Device Avai... See More ⇒
ru3070m.pdf
RU3070M N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MOSF... See More ⇒
Detailed specifications: RU30300R, RU3030M2, RU3040M, RU3040M2, RU304B, RU3050L, RU3065L, RU306C, IRLZ44N, RU3070M, RU3089L, RU3090M, RU30C8H, RU30D10H, RU30D8H, RU30E30L, RU30E40L
Keywords - RU3070L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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