RU3070M Specs and Replacement

Type Designator: RU3070M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN5060

RU3070M substitution

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RU3070M datasheet

 ..1. Size:307K  ruichips
 ru3070m.pdf pdf_icon

RU3070M

RU3070M N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MOSF... See More ⇒

 0.1. Size:722K  ruichips
 ru3070m3.pdf pdf_icon

RU3070M

RU3070M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/70A G RDS (ON) =3m (Typ.)@VGS=10V S S S RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technology D D Excellent Q xR product(FOM) Excellent QgxRDS(on) product(FOM) D DD 100% avalanche tested Qualified according to JEDEC criteria Lead Free and Green Device Avai... See More ⇒

 8.1. Size:328K  ruichips
 ru3070l.pdf pdf_icon

RU3070M

RU3070L N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, D RDS (ON) =3.3m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications Load Switch G S N-Channel MOSFET Absolute Maximum Ratings ... See More ⇒

Detailed specifications: RU3030M2, RU3040M, RU3040M2, RU304B, RU3050L, RU3065L, RU306C, RU3070L, IRFB4110, RU3089L, RU3090M, RU30C8H, RU30D10H, RU30D8H, RU30E30L, RU30E40L, RU30E4B

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