RU3070M Datasheet and Replacement
Type Designator: RU3070M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5060
RU3070M substitution
RU3070M Datasheet (PDF)
ru3070m.pdf

RU3070M N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, RDS (ON) =3.8m(Typ.)@VGS=10V RDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MOSF
ru3070m3.pdf

RU3070M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/70AGRDS (ON) =3m(Typ.)@VGS=10VSSSRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technologyDD Excellent Q xR product(FOM) Excellent QgxRDS(on) product(FOM)DDD 100% avalanche tested Qualified according to JEDEC criteria Lead Free and Green Device Avai
ru3070l.pdf

RU3070LN-Channel Advanced Power MOSFETFeatures Pin Description 30V/70A,D RDS (ON) =3.3m(Typ.)@VGS=10V RDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Load SwitchGSN-Channel MOSFETAbsolute Maximum Ratings
Datasheet: RU3030M2 , RU3040M , RU3040M2 , RU304B , RU3050L , RU3065L , RU306C , RU3070L , IRF640N , RU3089L , RU3090M , RU30C8H , RU30D10H , RU30D8H , RU30E30L , RU30E40L , RU30E4B .
History: SFP3710G | KIA5610A | RU30L15H | SWD6N80DE | STB3NK60ZT4 | SI6423DQ-T1 | STB80NF55-06T4
Keywords - RU3070M MOSFET datasheet
RU3070M cross reference
RU3070M equivalent finder
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History: SFP3710G | KIA5610A | RU30L15H | SWD6N80DE | STB3NK60ZT4 | SI6423DQ-T1 | STB80NF55-06T4



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