RU3089L Specs and Replacement

Type Designator: RU3089L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-252

RU3089L substitution

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RU3089L datasheet

 ..1. Size:293K  ruichips
 ru3089l.pdf pdf_icon

RU3089L

RU3089L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/89A, RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems N-Channel MOSFET Absolute Maximum... See More ⇒

 8.1. Size:383K  ruichips
 ru3089m.pdf pdf_icon

RU3089L

RU3089M N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.4m (Typ.)@VGS=10V D D D D RDS (ON) =3m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters Load switch G ... See More ⇒

 9.1. Size:403K  ruichips
 ru3080l.pdf pdf_icon

RU3089L

RU3080L N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.6m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U... See More ⇒

Detailed specifications: RU3040M, RU3040M2, RU304B, RU3050L, RU3065L, RU306C, RU3070L, RU3070M, IRF640N, RU3090M, RU30C8H, RU30D10H, RU30D8H, RU30E30L, RU30E40L, RU30E4B, RU30E60M2

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