RU3089L Datasheet and Replacement
Type Designator: RU3089L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 89 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-252
RU3089L substitution
RU3089L Datasheet (PDF)
ru3089l.pdf
RU3089LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/89A,RDS (ON) =3.8m (Typ.)@VGS=10VRDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application SystemsN-Channel MOSFETAbsolute Maximum
ru3089m.pdf
RU3089MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.4m(Typ.)@VGS=10V DDDDRDS (ON) =3m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters Load switchG
ru3080l.pdf
RU3080L N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U
Datasheet: RU3040M , RU3040M2 , RU304B , RU3050L , RU3065L , RU306C , RU3070L , RU3070M , IRF640N , RU3090M , RU30C8H , RU30D10H , RU30D8H , RU30E30L , RU30E40L , RU30E4B , RU30E60M2 .
Keywords - RU3089L MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: CMLM0585 | SFF60P05M
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