All MOSFET. RU3089L Datasheet

 

RU3089L Datasheet and Replacement


   Type Designator: RU3089L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-252
 

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RU3089L Datasheet (PDF)

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RU3089L

RU3089LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/89A,RDS (ON) =3.8m (Typ.)@VGS=10VRDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application SystemsN-Channel MOSFETAbsolute Maximum

 8.1. Size:383K  ruichips
 ru3089m.pdf pdf_icon

RU3089L

RU3089MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.4m(Typ.)@VGS=10V DDDDRDS (ON) =3m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters Load switchG

 9.1. Size:403K  ruichips
 ru3080l.pdf pdf_icon

RU3089L

RU3080L N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U

Datasheet: RU3040M , RU3040M2 , RU304B , RU3050L , RU3065L , RU306C , RU3070L , RU3070M , IRFP260N , RU3090M , RU30C8H , RU30D10H , RU30D8H , RU30E30L , RU30E40L , RU30E4B , RU30E60M2 .

History: TDM3430 | STW29NK50Z | CM7N60F | UTD408G-TN3-R | UTM2054L-AE3-R | TPA65R260M | PSMN2R0-30BL

Keywords - RU3089L MOSFET datasheet

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