RU30D8H Specs and Replacement

Type Designator: RU30D8H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP-8

RU30D8H substitution

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RU30D8H datasheet

 ..1. Size:266K  ruichips
 ru30d8h.pdf pdf_icon

RU30D8H

RU30D8H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/7A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =45m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless ... See More ⇒

 9.1. Size:267K  ruichips
 ru30d10h.pdf pdf_icon

RU30D8H

RU30D10H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/10A, RDS (ON) =16m (Typ.) @ VGS=10V RDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 9.2. Size:263K  ruichips
 ru30d20m3.pdf pdf_icon

RU30D8H

RU30D20M3 Dual N-Channel Advanced Power MOSFET Features Pin Description 30V/20A, RDS (ON) =8.5m (Typ.)@VGS=10V S2G2 RDS (ON) =11.5m (Typ.)@VGS=4.5V S1G1 Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM) Reliable and Rugged D2 100% avalanche tested D2 D1 Lead Free and Green Devices Available (RoHS Compliant) D1 PIN1 DFN303... See More ⇒

 9.3. Size:386K  ruichips
 ru30d20m2.pdf pdf_icon

RU30D8H

RU30D20M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/20A, RDS (ON) =8.5m (Typ.)@VGS=10V D2D2 D1D1 RDS (ON) =11.5m (Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge G2 100% avalanche tested S1G1S2 Lead Free and Green Devices Available (RoHS Compliant) PIN1 PIN1 PDFN3333 D1 D2 Applications Switchi... See More ⇒

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Detailed specifications: RU3065L, RU306C, RU3070L, RU3070M, RU3089L, RU3090M, RU30C8H, RU30D10H, IRF3710, RU30E30L, RU30E40L, RU30E4B, RU30E60M2, RU30E7H, RU30L15H, RU30L30M, RU30P3B

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