RU30S4H Specs and Replacement

Type Designator: RU30S4H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8

RU30S4H substitution

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RU30S4H datasheet

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RU30S4H

RU30S4H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -30V/-4.8A, RDS (ON) =50m (Typ.) @ VGS=-10V RDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications Power Management. Dual P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Rating... See More ⇒

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 ru30s15h.pdf pdf_icon

RU30S4H

RU30S15H P-Channel Advanced Power MOSFET Features Pin Description -30V/-15A, D2 RDS (ON) =15m (Typ.)@VGS=-10V D2 RDS (ON) =22m (Typ.)@VGS=-4.5V D1 Low On-Resistance D1 Super High Dense Cell Design Reliable and Rugged G2 Lead Free and Green Devices Available (RoHS Compliant) S2 G1 pin1 S1 SOP-8 Applications Power management Load switch Ba... See More ⇒

 9.2. Size:291K  ruichips
 ru30s5h.pdf pdf_icon

RU30S4H

RU30S5H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -30V/-5A, RDS (ON) =38m (Typ.) @ VGS=-10V RDS (ON) =56m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications Power Management. Dual P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

Detailed specifications: RU30L30M, RU30P3B, RU30P4B, RU30P4C, RU30P4C6, RU30P4H, RU30P5D, RU30P5H, IRF9540N, RU30S5H, RU35122R, RU35122S, RU3520H, RU3560L, RU3568L, RU3568R, RU3582R

Keywords - RU30S4H MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs