RU30S4H Datasheet and Replacement
Type Designator: RU30S4H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP-8
RU30S4H substitution
RU30S4H Datasheet (PDF)
ru30s4h.pdf

RU30S4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-4.8A,RDS (ON) =50m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rating
ru30s15h.pdf

RU30S15HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-15A,D2 RDS (ON) =15m(Typ.)@VGS=-10VD2 RDS (ON) =22m(Typ.)@VGS=-4.5VD1 Low On-ResistanceD1 Super High Dense Cell Design Reliable and RuggedG2 Lead Free and Green Devices Available (RoHS Compliant)S2G1pin1S1SOP-8ApplicationsPower managementLoad switchBa
ru30s5h.pdf

RU30S5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =56m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
Datasheet: RU30L30M , RU30P3B , RU30P4B , RU30P4C , RU30P4C6 , RU30P4H , RU30P5D , RU30P5H , IRF1010E , RU30S5H , RU35122R , RU35122S , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R .
History: IPL65R420E6 | KMA5D8DP20Q | SI5449DC | MTC8404V8 | SI7121ADN | NCE2025I
Keywords - RU30S4H MOSFET datasheet
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RU30S4H equivalent finder
RU30S4H lookup
RU30S4H substitution
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History: IPL65R420E6 | KMA5D8DP20Q | SI5449DC | MTC8404V8 | SI7121ADN | NCE2025I



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