RU30S5H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU30S5H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP-8
RU30S5H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU30S5H Datasheet (PDF)
ru30s5h.pdf
RU30S5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =56m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru30s15h.pdf
RU30S15HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-15A,D2 RDS (ON) =15m(Typ.)@VGS=-10VD2 RDS (ON) =22m(Typ.)@VGS=-4.5VD1 Low On-ResistanceD1 Super High Dense Cell Design Reliable and RuggedG2 Lead Free and Green Devices Available (RoHS Compliant)S2G1pin1S1SOP-8ApplicationsPower managementLoad switchBa
ru30s4h.pdf
RU30S4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-4.8A,RDS (ON) =50m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rating
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
