All MOSFET. RU3568L Datasheet

 

RU3568L MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU3568L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-252

 RU3568L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU3568L Datasheet (PDF)

 ..1. Size:329K  ruichips
 ru3568l.pdf

RU3568L RU3568L

RU3568LN-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =6m(Typ.)@VGS=10V D RDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications DC/DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsS

 8.1. Size:303K  ruichips
 ru3568r.pdf

RU3568L RU3568L

RU3568RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/68A,RDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbol

 9.1. Size:298K  ruichips
 ru3560l.pdf

RU3568L RU3568L

RU3560LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/50A,RDS (ON) =13m(Typ.)@VGS=10VRDS (ON) =18m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche RatedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Low Voltage Inverter ApplicationsN-Channel MOSFET

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History: SWN4N65K2 | NTJS4405NT1 | HUF76432P3 | QM3016AD | IRFP3207Z

 

 
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