RU3568L Datasheet and Replacement
Type Designator: RU3568L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-252
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RU3568L Datasheet (PDF)
ru3568l.pdf

RU3568LN-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =6m(Typ.)@VGS=10V D RDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications DC/DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsS
ru3568r.pdf

RU3568RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/68A,RDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbol
ru3560l.pdf

RU3560LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/50A,RDS (ON) =13m(Typ.)@VGS=10VRDS (ON) =18m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche RatedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Low Voltage Inverter ApplicationsN-Channel MOSFET
Datasheet: RU30P5D , RU30P5H , RU30S4H , RU30S5H , RU35122R , RU35122S , RU3520H , RU3560L , K4145 , RU3568R , RU3582R , RU3582S , RU3710R , RU3710S , RU40120M , RU40120R , RU40120S .
Keywords - RU3568L MOSFET datasheet
RU3568L cross reference
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History: SWN8N80K | TSM2311CX



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