All MOSFET. RU40E32L Datasheet

 

RU40E32L Datasheet and Replacement


   Type Designator: RU40E32L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
 

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RU40E32L Datasheet (PDF)

 ..1. Size:293K  ruichips
ru40e32l.pdf pdf_icon

RU40E32L

RU40E32LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/45A,RDS (ON) =9m(Typ.)@VGS=10VRDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum

 9.1. Size:291K  ruichips
ru40e25l.pdf pdf_icon

RU40E32L

RU40E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/25A,RDS (ON) =26m(Typ.)@VGS=10VRDS (ON) =38m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximu

 9.2. Size:329K  ruichips
ru40e80l.pdf pdf_icon

RU40E32L

RU40E80LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/80A,D RDS (ON) =4.5m(Typ.)@VGS=10V RDS (ON) =5.5m(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Switching ApplicationsGSN-Channel MOSFETAbso

Datasheet: RU40280R , RU4068L , RU4089R , RU4090L , RU4095L , RU4099Q , RU4099R , RU40E25L , 13N50 , RU40E80L , RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P , RU4H10R .

History: IPN60R360P7S | NTTFS010N10MCL

Keywords - RU40E32L MOSFET datasheet

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