All MOSFET. RU40E32L Datasheet

 

RU40E32L Datasheet and Replacement


   Type Designator: RU40E32L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
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RU40E32L Datasheet (PDF)

 ..1. Size:293K  ruichips
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RU40E32L

RU40E32LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/45A,RDS (ON) =9m(Typ.)@VGS=10VRDS (ON) =15m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum

 9.1. Size:291K  ruichips
ru40e25l.pdf pdf_icon

RU40E32L

RU40E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/25A,RDS (ON) =26m(Typ.)@VGS=10VRDS (ON) =38m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximu

 9.2. Size:329K  ruichips
ru40e80l.pdf pdf_icon

RU40E32L

RU40E80LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/80A,D RDS (ON) =4.5m(Typ.)@VGS=10V RDS (ON) =5.5m(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Switching ApplicationsGSN-Channel MOSFETAbso

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MPVA20N65F | IRLR024 | CED05N8 | BUZ84 | IPB123N10N3G | AON6794 | BL10N70-A

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