All MOSFET. RU40P3C Datasheet

 

RU40P3C Datasheet and Replacement


   Type Designator: RU40P3C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23
 

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RU40P3C Datasheet (PDF)

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RU40P3C

RU40P3CP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-3A, RDS (ON) =100m(Typ.)@VGS=-10VD RDS (ON) =150m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFETAbsolut

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RU40P3C

RU40P4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-4.5A,RDS (ON) =60m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Load Switches.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25

Datasheet: RU4095L , RU4099Q , RU4099R , RU40E25L , RU40E32L , RU40E80L , RU40L10H , RU40L10L , 75N75 , RU40P4H , RU40S4H , RU4H10P , RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R .

History: SDF044JAA-D | AOC3864 | VBM1303

Keywords - RU40P3C MOSFET datasheet

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