RU4H10R Specs and Replacement
Type Designator: RU4H10R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO-220
RU4H10R substitution
- MOSFET ⓘ Cross-Reference Search
RU4H10R datasheet
ru4h10r.pdf
RU4H10R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 400V/10A, RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 23pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximu... See More ⇒
ru4h10p.pdf
RU4H10P N-Channel Advanced Power MOSFET MOSFET Features Pin Description 400V/10A, RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 18pF) Extremely high dv/dt capability 100% avalanche tested TO-220F Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maxim... See More ⇒
Detailed specifications: RU40E32L, RU40E80L, RU40L10H, RU40L10L, RU40P3C, RU40P4H, RU40S4H, RU4H10P, STF13NM60N, RU55111R, RU55200Q, RU55L18L, RU55L18R, RU5H13R, RU5H18Q, RU5H5L, RU5H5P
Keywords - RU4H10R MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
