RU55200Q Specs and Replacement

Type Designator: RU55200Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 326 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-247

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RU55200Q datasheet

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RU55200Q

RU55200Q N-Channel Advanced Power MOSFET Features Pin Description 55V/200A, RDS (ON) =3.3m (Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficiency Synchronous Rectification in SM... See More ⇒

Detailed specifications: RU40L10H, RU40L10L, RU40P3C, RU40P4H, RU40S4H, RU4H10P, RU4H10R, RU55111R, 2N60, RU55L18L, RU55L18R, RU5H13R, RU5H18Q, RU5H5L, RU5H5P, RU5H5R, RU5H8P

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