RU55200Q Datasheet and Replacement
Type Designator: RU55200Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-247
RU55200Q Datasheet (PDF)
ru55200q.pdf

RU55200QN-Channel Advanced Power MOSFETFeatures Pin Description 55V/200A, RDS (ON) =3.3m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSF3117 | FQB33N10 | HRLU150N10K
Keywords - RU55200Q MOSFET datasheet
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History: SSF3117 | FQB33N10 | HRLU150N10K



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