RU55200Q MOSFET. Datasheet pdf. Equivalent
Type Designator: RU55200Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 326 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO-247
RU55200Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU55200Q Datasheet (PDF)
..1. Size:287K ruichips
ru55200q.pdf
ru55200q.pdf
RU55200QN-Channel Advanced Power MOSFETFeatures Pin Description 55V/200A, RDS (ON) =3.3m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
