All MOSFET. RU55200Q Datasheet

 

 

RU55200Q Datasheet and Replacement


   Type Designator: RU55200Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-247
 

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RU55200Q Datasheet (PDF)

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RU55200Q

RU55200QN-Channel Advanced Power MOSFETFeatures Pin Description 55V/200A, RDS (ON) =3.3m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SM

Datasheet: RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P , RU4H10R , RU55111R , 2N60 , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R , RU5H8P .

History: FQB2N50TM | SQM120N02-1M3L | SSF6008

Keywords - RU55200Q MOSFET datasheet

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