RU55200Q Datasheet and Replacement
Type Designator: RU55200Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-247
RU55200Q substitution
RU55200Q Datasheet (PDF)
ru55200q.pdf

RU55200QN-Channel Advanced Power MOSFETFeatures Pin Description 55V/200A, RDS (ON) =3.3m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SM
Datasheet: RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P , RU4H10R , RU55111R , IRF830 , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R , RU5H8P .
History: AOC2804B | SIL05N06 | TPC8121 | NCEP0107AR | 2SK3483-ZK | GSM4946 | PHD87N03LT
Keywords - RU55200Q MOSFET datasheet
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History: AOC2804B | SIL05N06 | TPC8121 | NCEP0107AR | 2SK3483-ZK | GSM4946 | PHD87N03LT



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