RU55L18R Specs and Replacement

Type Designator: RU55L18R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TO-220

RU55L18R substitution

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RU55L18R datasheet

 ..1. Size:320K  ruichips
 ru55l18r.pdf pdf_icon

RU55L18R

RU55L18R P-Channel Advanced Power MOSFET MOSFET Features Pin Description -60V/-16A, RDS (ON) =100m (Typ.)@VGS=-10V RDS (ON) =125m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO-220 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Load Switch DC/DC ... See More ⇒

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 ru55l18l.pdf pdf_icon

RU55L18R

RU55L18L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -60V/-16A, RDS (ON) =100m (Typ.)@VGS=-10V RDS (ON) =125m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Load Switch DC/DC C... See More ⇒

Detailed specifications: RU40P3C, RU40P4H, RU40S4H, RU4H10P, RU4H10R, RU55111R, RU55200Q, RU55L18L, P60NF06, RU5H13R, RU5H18Q, RU5H5L, RU5H5P, RU5H5R, RU5H8P, RU5H8R, RU60100R

Keywords - RU55L18R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.