RU5H5P Datasheet and Replacement
Type Designator: RU5H5P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220F
RU5H5P substitution
RU5H5P Datasheet (PDF)
ru5h5p.pdf

RU5H5PN-Channel Advanced Power MOSFETFeatures Pin Description 500V/5A, RDS (ON) =1200m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FApplications D High efficiency switch mode power supplies LightingGSN-Channel MOSFETAbsolute Maximum Ratings
ru5h5l.pdf

RU5H5LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 500V/5A,RDS (ON) =1.3(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switch Model Power Supplies Electronic Lamp BallastsN-Channel MOSFETAbsolute Maximum RatingsSymbol
ru5h5r.pdf

RU5H5RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 500V/5A,RDS (ON) =1.2(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications High efficiency switch mode powersupplies LightingN-Channel MOSFETAbsolute Maximum RatingsSymbol
Datasheet: RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , IRFZ48N , RU5H5R , RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R .
History: PHB95NQ04LT
Keywords - RU5H5P MOSFET datasheet
RU5H5P cross reference
RU5H5P equivalent finder
RU5H5P lookup
RU5H5P substitution
RU5H5P replacement
History: PHB95NQ04LT



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