RU6055S MOSFET. Datasheet pdf. Equivalent
Type Designator: RU6055S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 388 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-263
RU6055S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU6055S Datasheet (PDF)
ru6055s.pdf
RU6055SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC
ru6055l.pdf
RU6055LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications DC-DC Converters and Off-line UPS High Speed Power Switching High Frequency CircuitsN-Channel MOSFETAbsolute Maxim
ru6055r.pdf
RU6055RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC
ru6051k.pdf
RU6051KN-Channel Advanced Power MOSFETFeatures Pin Description 60V/50A, RDS (ON) =10m(Typ.)@VGS=10V RDS (ON) =12m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DDDDDDDApplicationspp DC-DC Converters
ru6050s.pdf
RU6050SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra
ru6050r.pdf
RU6050RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra
ru6051h.pdf
RU6051HN-Channel Advanced Power MOSFETFeatures Pin Description 60V/50A,D RDS (ON) =8.5m(Typ.)@VGS=10VD RDS (ON) =9.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced TrenchTM TechnologyD Ultra Low On-ResistanceG Fast Switching SpeedS 100% Avalanche TestedS Lead Free and Green Devices (RoHS Compliant)SSOP-8D D D D(8
ru6050l.pdf
RU6050LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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