RU6099S Specs and Replacement
Type Designator: RU6099S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-263
RU6099S substitution
RU6099S datasheet
ru6099s.pdf
RU6099S N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m(Typ.) @VGS=10V D Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Available S TO263 D Applications Switching Application Systems Inverter... See More ⇒
ru6099r.pdf
RU6099R N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems ... See More ⇒
Detailed specifications: RU6051K , RU6055L , RU6055R , RU6055S , RU6070L , RU6075R , RU6080L , RU6099R , IRF740 , RU60C20R5 , RU60D5H , RU60E16L , RU60E16R , RU60E25L , RU60E25R , RU60E5D , RU60E5H .
Keywords - RU6099S MOSFET specs
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