All MOSFET. RU6099S Datasheet

 

RU6099S MOSFET. Datasheet pdf. Equivalent

Type Designator: RU6099S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 430 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-263

RU6099S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU6099S Datasheet (PDF)

0.1. ru6099s.pdf Size:320K _ruichips

RU6099S
RU6099S

RU6099SN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =6m(Typ.) @VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green AvailableSTO263DApplications Switching Application Systems Inverter

8.1. ru6099r.pdf Size:338K _ruichips

RU6099S
RU6099S

RU6099R N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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